Making full use of the cylinder business experience gained through our work with fluorine gases, Central Glass is also working to develop non-fluorine products. We supply Hf, Zr, Ti, Si, Ta and other compounds as precursors for the MOCVD/ALD technique, and we exploit our proprietary purification and analytical technologies to the full to attain a high purity. In particular, we have developed a technique for removing Zr from Hf compounds which has been difficult to do as Zr and Hf are of the same family of elements.
Hafnium Precursors
| Product Name | State at room temperature | Boiling point [°C] | Purity | CAS No. | Applications |
|---|---|---|---|---|---|
| Hf[N(CH3)2]4 [TDMAH] |
Solid (melting point is 28°C) | 40°C/0.1Torr | >99.999%* | 19782-68-4 | HfO2 ,HfAlON, HfSiON layer materials |
| Hf[N(CH3)(C2H5)]4 [TEMAH] |
Liquid | 62°C/0.1Torr | 352535-01-4 | ||
| Hf[N(C2H5)2]4 [TDEAH] |
Liquid | 84°C/0.1Torr | 19824-55-6 | ||
| Hf[Ot-(C4H9)]4 [HTTB] |
Liquid | 61°C/1Torr | 2172-02-03 |
Notes
* Zr Excluding density
Standard Grade: Zr<100 wt.ppm
High Pure Grade: Zr<10 wt.ppm
Ultra High Pure Grade: Zr<1 wt.ppm
Other Precursors
| Product Name | State at room temperature | Boiling point [°C] | CAS No. | Applications |
|---|---|---|---|---|
| Zr[N(C2H5)2]4 (TDEAZ) |
Liquid | 79°C/0.1Torr | 13801-49-5 | CVD High-kmaterial |
| Zr[N(CH3)(C2H5)]4 (TEMAZ) |
Liquid | 65°C/0.1Torr | 175923-04-3 | |
| Si[N(CH3)2]3H (3DMAS) |
Liquid | 33°C/1Torr | 15112-89-7 | |
| Si[N(CH3)(C2H5)]3H (3EMAS) |
Liquid | 25°C/0.2Torr | 496864-53-0 | |
| Ti[N(CH3)2]4 (TDMAT) |
Liquid | 50 °C/0.5Torr | 3275-24-9 | CVD TiN layer material |
| Ti[N(CH3)(C2H5)]4 (TEMAT) |
Liquid | 80°C/0.1Torr | 308103-54-0 | |
| Ti[N(C2H5)2]4 (TDEAT) |
Liquid | 112°C/0.1Torr | 4419-47-0 | |
| Ge(CH3)3H (3MGE) |
Liquid | 27°C | 1449-63-4 | Implantation material SiGe material |
| Ge(CH3)4 (4MGE) |
Liquid | 44°C | 865-52-1 |
For Enquires
Fine Chemicals Sales Department-2
TEL: +81-3-3259-7267
