Etching Gases for Semiconductors

We have commercialized various highly selective etching gases applied for the 3D devices and the cutting-edge materials.

*Contact Central Glass directly for more information.


Compared to existing etching gases (C4F6, C4F8, etc.), C3H2F4 can etch SiO2 film or SiN film with high selectivity against the mask materials such as amorphous-Si. (JP Patent No. 5434970)

Purity 99.99% or more
Packaging Cylinder (10L, 47L) Material: Manganese steel


  • 3D-NAND SiO2/SiN multilayer etching
  • High Aspect SiO2 or SiN deep etching
  • Removal of SiN sacrificial layer


IF7 can etch Si film with high selectivity against the other materials such as SiO2 or SiN. Contact us directly for more information.

Purity 99.95% or more


  • Removal of Poly-Si dummy gate
  • Removal of Si hard mask
  • Si sacrifical layer etching


We have customized CIF3 which has been used for cleaning gas to high purity for etching gas. Contact us directly for more information.

Purity 99.99% or more


  • Etching gas for the cutting-edge devices


Used as etching gas for MEMS

State at room temperature Solid
Boiling point [℃] 114℃
CAS No. 13709-36-9


  • Etching gas for MEMS

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Research and Development
View our R&D activities.

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