CEG™ Series (Etching Gases for Semiconductors)

"CEG™" is a brand that represents "innovative etching gases for semiconductors developed by Central Glass." In our CEG™ Series, we have commercialized various highly selective etching gases applied for the 3D devices and the cutting-edge materials.

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CEG™ ClF3

Ordinarily used as a cleaning gas, we have refined ClF3 to a high purity to be used as an etching gas.

Purity 99.99% or more

Applications

  • Etching gas for the cutting-edge devices

CEG™ 34E

Compared to existing etching gases (C4F6, C4F8, etc.), CEG™ 34E can etch SiO2 film or SiN film with high selectivity against mask materials such as amorphous carbon.

Purity 99.99% or more
Packaging Cylinder (10L, 47L) Material: Manganese steel

Applications

  • 3D-NAND SiO2/SiN multilayer etching
  • High Aspect SiO2 or SiN deep etching
  • Removal of SiN sacrificial layer

CEG™ 16N

Compared to existing etching gases(C4F6, C4F8, etc.), CEG™ 16N can greatly improve the selectivity of SiO2 firm against mask materials such as amorphous carbon, when used as an additive gas during etching.

Purity 99.99% or more
Packaging Cylinder (10L, 47L) Material: Manganese steel

Applications

  • 3D-NAND SiO2/SiN multilayer etching
  • High Aspect SiO2 deep etching

CEG™ 31Y

CEG™ 31Y can etch SiO2 film with high selectivity against mask materials such as amorphous carbon. It can also improve the morphology of mask materials when used an additive gas during etching.

Purity 99.99% or more
Packaging Cylinder (10L, 47L) Material: Manganese steel

Applications

  • High Aspect SiO2 deep etching
  • Improving morphology of mask materials during etching

CEG™ IF7

CEG™ IF7 can etch Si film with high selectivity against other materials such as SiO2 or SiN.

Purity 99.95% or more

Applications

  • Removal of Poly-Si dummy gate
  • Removal of Si hard mask
  • Si sacrificial layer etching

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